Research Scientist (RF/mmWave GaN device large-signal characterization and modeling)

Job Description

The National Semiconductor Translation and Innovation Centre (NSTIC) (GaN) seeks a candidate who can professionally use automated RF tools to test linear and nonlinear characteristics of RF GaN devices and create behavioural, empirical or physical models.

Successful candidate should have depth knowledge of RF compound semiconductor device operation principles, proficient hands‑on experience at RF power device testing in automation, and good hands‑on experience in systematic approaches and strategies to analyze device characterization data to create device models compatible with standard EDA platforms.

Job Requirements

• PhD in Semiconductor Physics, Electrical Engineering or related areas.
• In‑depth knowledge of III‑V based FET models (e.g., CFET, EEHEMT, Angelov, ASM, etc.) and parameter extraction methodologies.
• Good knowledge of RF on‑wafer calibration and de‑embedding theory and procedures.
• Professional hands‑on experience with Maury/Focus load‑pull systems for on‑wafer measurement.
• Good experience with at least one programming language (Python/C++/MATLAB).
• Team spirit and problem‑solving ability.
• Excellent verbal and written communication skills.
• Active track record of scientific publications in international journals and peer‑review conferences.