Job Description
We are seeking a talented and passionate Scientist/Senior Scientist to join our silicon carbide (SiC) crystal growth team. The successful candidate will play a crucial role in developing crystal growth technologies for semi-insulating SiC wafer production, which are used as substrates for RF and millimeter-wave GaN devices. This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) – GaN program.
Responsibilities
- Lead and manage SiC crystal growth-related projects, including planning, execution, and reporting.
- Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices.
- Design, execute, and analyze SiC crystal growth experiments using physical vapor transport (PVT) and related growth techniques.
- Develop physics-based, data-driven, and digital twin models to improve growth rate, resistivity control, and wafer uniformity.
- Apply AI/ML methods and materials simulations to optimize crystal growth processes and predict material properties.
- Characterize SiC crystals and wafers, including resistivity, defect density, crystal quality, and uniformity.
- Collaborate closely with device, epitaxy, and integration teams to ensure material performance meets device requirements.
- Troubleshoot processes and equipment to maintain tool performance and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Action Plans (OCAPs), FMEA, SPC and other technical documentation.
- Work with external vendors to control the wafering process and produce SiC wafers from SiC boules.
- Guide equipment engineers in maintaining PVT and supporting tools to achieve tool uptime above 90%.
- Document experimental results, prepare technical reports, and contribute to publications, patents, and project reviews.
- Prepare and deliver technical presentations for internal reviews, conferences, and journals.
- Support technology transfer and scale-up activities aligned with NSTIC–GaN program objectives.
- Perform other related duties as assigned.
Requirements
- PhD in Materials Science, Electrical Engineering, Physics, or a related discipline.
- 3 - 5 years of hands-on experience in silicon carbide (SiC) crystal growth using the Physical Vapor Transport (PVT) method.
- Experience with chamber-scale simulations for Physical Vapor Transport (PVT) processes.
- Strong background in SiC materials science and characterization of SiC wafers.
- Excellent communication skills, strong industry awareness, and proven problem-solving abilities.
- Highly motivated self-starter with the ability to work independently and collaboratively in a team environment.
- Prior industry experience is an advantage.